NANOSCALE INP ISLANDS EMBEDDED IN INGAP

被引：125

作者：

KURTENBACH, A

EBERL, K

SHITARA, T

机构：

[1] Max-Planck-Institute für Festkörperforschung, 70569 Stuttgart

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.114213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have prepared small InP islands which are embedded in In0.485Ga0.515P grown on a (100) GaAs substrate by solid-source molecular beam epitaxy. The InP islands form due to the 3.7% lattice mismatch between In0.485Ga0.515P and InP. Atomic force microscopy measurements show that the island size is typically ∼50 nm in diameter and ∼5 nm in height for nominally two monolayers of InP deposited on In0.485Ga0.515P. The energy of the photoluminescence (PL) peak shifts from 1.85 to 1.53 eV as the nominal InP thickness increases from 2 to 10 monolayers. A minimum PL linewidth of 21.6 meV and the maximum intensity of the PL originating from the InP islands is observed for 7.3 monolayers InP. © 1995 American Institute of Physics.

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页码：361 / 363

页数：3

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