Photovoltaic properties of polymer p-n junctions made with P3OT/BBL bilayers

被引：21

作者：

Manoj, AG ^{[1
]}

Narayan, KS ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

来源：

OPTICAL MATERIALS | 2003年 / 21卷 / 1-3期

关键词：

p-n bilayer; photocurrent; steady state; modulated; transient;

D O I：

10.1016/S0925-3467(02)00172-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photovoltaic and interfacial properties of heteorojunction polymer device consisting of p-type poly(3-octyl thiophene) and n-type poly(benzimidazobenzophenanthroline) are investigated. The photocurrent efficiency is enhanced at least by a factor of 100 in these bilayers compared to their respective single layer structures. The interfacial properties are studied using current-voltage characteristics, transient photocurrent measurement and modulated photocurrent spectroscopy. The open circuit photovoltage corresponds to the estimated fermi level difference of the polymers. The dispersive transport and interfacial charging in these bilayers are studied using transient and modulated photocurrent measurements. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：417 / 420

页数：4