Large-Yield Preparation of High-Electronic-Quatity Graphene by a Langmuir-Schaefer Approach

被引：72

作者：

Gengler, Regis Y. N. ^{[1
]}

Veligura, Alina ^{[1
]}

Enotiadis, Apostolos ^{[2
]}

Diamanti, Evmorfia K. ^{[2
]}

Gournis, Dimitrios ^{[1
,2
]}

Jozsa, Csaba ^{[1
]}

van Wees, Bart J. ^{[1
]}

Rudolf, Petra ^{[1
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Univ Ioannina, Dept Mat Sci & Engn, GR-45110 Ioannina, Greece

来源：

SMALL | 2010年 / 6卷 / 01期

关键词：

electrical properties; graphene; graphene oxide; langmuir-schaefer films; self-assembly; ROOM-TEMPERATURE; GRAPHITE OXIDE; FILMS; SHEETS; LAYERS; GAS;

D O I：

10.1002/smll.200901120

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Controlled deposition of graphene single layers is demonstrated by use of a Langmuir-Schaefer approach and oxidized graphene as a starting material. The transferred films consist of a 90% single-layer graphene showing typical bipolar behavior and a mobility of 12 cm2 V-1 s-1 in the metallic regime. Very large sheet size (10-150 μm2) and controllable coverage open the way to accessible large-scale deposition. (Figure Presented). © 2010 WILEY-VCH Verlag GmbH & Co. KGaA,.

引用

页码：35 / 39

页数：5

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