Polycrystalline growth and recrystallization processes in sputtered ITO thin films

被引：83

作者：

Guillén, C ^{[1
]}

Herrero, J ^{[1
]}

机构：

[1] CIEMAT, Dept Energia, E-28040 Madrid, Spain

来源：

THIN SOLID FILMS | 2006年 / 510卷 / 1-2期

关键词：

indium tin oxide; sputtering; annealing; structural properties;

D O I：

10.1016/j.tsf.2005.12.273

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) thin films with various thicknesses from 170 to 700 rim have been grown onto unheated glass substrates by sputtering from ceramic target, and subsequently annealed in vacuum at temperatures ranging from 250 to 350 degrees C. The structure, morphology and electro-optical characteristics of the ITO samples have been analyzed by X-ray diffraction, atomic force microscopy, four-point electrical measurements and spectrophotometry. Polycrystalline ITO growth has been found varying with film thickness. The thickness also determined the recrystallization achievable by annealing and the electro-optical thin film properties. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：260 / 264

页数：5

共 26 条

[1] Investigation of annealing effects on sol-gel deposited indium tin oxide thin films in different atmospheres [J].