Growth and recrystallization of CuInS2 films in spray pyrolytic process

被引：47

作者：

Krunks, M

Mikli, V

Bijakina, O

Mellikov, E

机构：

[1] Tallinn Univ Technol, Inst Mat Technol, EE-79086 Tallinn, Estonia

[2] Tallinn Univ Technol, Ctr Mat Res, EE-79086 Tallinn, Estonia

来源：

APPLIED SURFACE SCIENCE | 1999年 / 142卷 / 1-4期

关键词：

spray pyrolysis; thin films; copper indium disulphide; structure; recrystallisation; surface morphology;

D O I：

10.1016/S0169-4332(98)00675-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It is shown that the structure, composition and surface morphology of chemically sprayed CuInS2 films depend on the growth temperature and copper to indium ratio in the spraying solution. In-rich films have flat surface but they are multiphase. The use of Cu-rich initial solutions leads to single-phase films with the rough surface morphology. The important role in the formation of these films plays segregation of molten phase of thermal decomposition products on the surface during the spray process. The possible crystal growth mechanisms in both types of CuInS2 thin films in the spray process are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：356 / 361

页数：6

共 16 条

[1] Formation of CuInSe2 by the selenization of sputtered Cu/In layers [J].