Nanosecond spin memory of electrons in CdTe/CdMgTe quantum wells

被引：9

作者：

Astakhov, GV ^{[1
]}

Kiessling, T

Yakovlev, DR

Zhukov, EA

Bayer, M

Ossau, W

Zakharchenya, BP

Karczewski, G

Wojtowicz, T

Kossut, J

机构：

[1] Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany

[2] Univ Dortmund, D-44221 Dortmund, Germany

[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[4] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119992, Russia

[5] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 04期

关键词：

D O I：

10.1002/pssb.200564737

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on spin memory relaxation time tau(s) of free electrons in CdTe-based quantum wells which is found to be in the nanosecond range. In these studies two different techniques have been exploited: (i) the Hanle effect under cw excitation and (ii) the time-resolved pump-&-probe Kerr rotation measured under excitation by 1.8-ps optical pulses. These independent techniques give very close results tau(s) = 19 ns and tau(s) = 14 ns, respectively. To our knowledge this is by two orders of magnitude longer than the electron spin relaxation times reported for CdTe-based quantum wells so far. (c) 2006 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.

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收藏

页码：858 / 862

页数：5

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