Optical method for the determination of carrier density in modulation-doped quantum wells -: art. no. 115310

被引：45

作者：

Astakhov, GV ^{[1
]}

Kochereshko, VP

Yakovlev, DR

Ossau, W

Nürnberger, J

Faschinger, W

Landwehr, G

Wojtowicz, T

Karczewski, G

Kossut, J

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[3] Polish Acad Sci, Inst Phys, PL-02608 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.65.115310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An optical method is suggested to determine the concentration of two-dimensional electrons in modulation-doped quantum wells at low and moderate electron densities between 10(9) and 2x10(11) cm(-2). The method is based on an analysis of magnetoreflectivity spectra of charged excitons (trions). The circular polarization degree and the oscillator strength of the charged excitons contain information about the density and spin polarization of two-dimensional electron gas. The method is applied to CdTe/(Cd,Mg)Te and ZnSe/ (Zn, Mg)(S,Se) heterostructures.

引用

页码：1153101 / 1153109

页数：9

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