Structurally and electrically uniform deposition of high-k TiO2 thin films on a Ru electrode in three-dimensional contact holes using atomic layer deposition

被引：41

作者：

Kim, SK

Kim, KM

Kwon, OS

Lee, SW

Jeon, CB

Park, WY

Hwang, CS ^{[1
]}

Jeong, J

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Evertek Co, Sungnam 462120, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 12期

关键词：

D O I：

10.1149/1.2081994

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Atomic-layer-deposited (ALD) TiO2 thin films with a high bulk dielectric constant (k similar to 100) were grown on an ALD Ru electrode at a growth temperature of 250 C. The films were grown on flat and contact hole structured Ru electrodes. The as-deposited films were crystallized with a rutile structure due to the adoption of O-3 oxidant with a very high concentration (400 g/m(3)). The electrical measurements of the Ru/TiO2/Ru capacitors fabricated on the contact hole structures with different hole sizes and distances between the holes showed that the film's thickness, crystalline structure, and dielectric properties are uniform over the entire three-dimensional structure. (c) 2005 The Electrochemical Society.

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页码：F59 / F62

页数：4

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