Dynamic behavior of Si magic clusters on Si(111) surfaces

被引：82

作者：

Hwang, IS ^{[1
]}

Ho, MS

Tsong, TT

机构：

[1] Acad Sinica, Inst Phys, Taipei, Taiwan

[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[3] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.83.120

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In a scanning tunneling microscope (STM) study of Si(111) surfaces from room temperature to 600 degrees C, we find a special type of clusters which are not only stable with respect to surface diffusion, but are also the fundamental unit in mass transport phenomena, step fluctuations in detachment and attachment of Si atoms at step edges, and epitaxial growth. Using Arrhenius analysis, we derive path specific hopping rate parameters for these clusters. A concerted reaction model is proposed to explain the nucleation and growth behavior of Si on Si(111).

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页码：120 / 123

页数：4

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