DYNAMIC OBSERVATION OF SI CRYSTAL-GROWTH ON A SI(111)7X7 SURFACE BY HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY

被引：50

作者：

HASEGAWA, T

KOHNO, M

HOSAKA, S

HOSOKI, S

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.48.1943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dynamic process of Si crystal growth on a Si(111)7 X 7 surface was studied in situ using high-temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7 X 7 surface, kept at 350-degrees-C, and the crystal growth was observed. The step-flow growth was observed as the appearance of new adatoms at the step edge. The [112BAR] steps became jagged with [112BAR] steps. At the [112BAR] steps, new adatoms appeared in rows along the step edges.

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页码：1943 / 1946

页数：4

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