UHV-REM STUDY OF HOMOEPITAXIAL GROWTH OF SI

被引：13

作者：

SHIMA, M

TANISHIRO, Y

KOBAYASHI, K

YAGI, K

机构：

[1] Physics Department, Tokyo Institute of Technology, Tokyo, 152, Oh-okayama

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90768-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An electron beam evaporator for in-situ reflection electron microscope study of homoepitaxial growth of Si was newly constructed and was attached to an ultra-high vacuum electron microscope. Growths in the step flow mode and the two-dimensional island nucleation and growth mode were observed. Nucleation at out-of-phase boundaries and that of the 5 x 5 structure on (111) surface were noticed. Changes of surface morphology corresponding to the RHEED intensity oscillation were observed directly.

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页码：359 / 364

页数：6

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