RHEED INTENSITY ROCKING CURVES FROM SI(111) SURFACE DURING MBE GROWTH

被引：25

作者：

NAKAHARA, H

ICHIMIYA, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90445-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：472 / 475

页数：4

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