Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires

被引：19

作者：

Demichel, O. ^{[1
]}

Oehler, F. ^{[1
]}

Noe, P. ^{[1
]}

Calvo, V. ^{[1
]}

Pauc, N. ^{[1
]}

Gentile, P. ^{[1
]}

Baron, T. ^{[2
]}

Peyrade, D. ^{[2
]}

Magnea, N. ^{[1
]}

机构：

[1] CEA, Inst Nanosci & Cryogenie, Serv Phys Mat & Microstruct, Lab Silicium Nanoelect Photon & Struct, F-38054 Grenoble, France

[2] CNRS, Lab Tech Microelect, F-38054 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 21期

关键词：

chemical vapour deposition; electron-hole recombination; elemental semiconductors; energy gap; exchange interactions (electron); phonons; photoluminescence; semiconductor quantum wires; silicon; silicon compounds; solid-state plasma; surface states;

D O I：

10.1063/1.3021359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study by low temperature photoluminescence measurements the electronic states of silicon nanowires obtained by copper catalyzed chemical vapor deposition and compare them with those of wires made by etching silicon on the insulator structure. Thermal oxidation of nanowires appears to be absolutely necessary to passivate surface states and to enhance radiative recombinations at the silicon band gap. The study of the behavior of this transition as a function of temperature and pump power demonstrates that it involves the phonon assisted recombination of free carriers. The recombination energy appears at the silicon band gap, renormalized by exchange and correlation interactions favored by spatial confinement.

引用

页数：3

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