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Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

被引：12
作者：
Jia, G.
Arguirov, T.
Kittler, M.
Su, Z.
Yang, D.
Sha, J.
机构：
[1] IHP Microelect, D-15236 Frankfurt, Germany
[2] IHP BTU Joint Lab, D-03013 Cottbus, Germany
[3] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
[4] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
SEMICONDUCTORS | 2007年 / 41卷 / 04期
关键词：
D O I：
10.1134/S1063782607040057
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Silicon nanowire samples fabricated by thermal evaporation of SiO powder were investigated by Cathodoluminescence. Three main bands were found at low temperatures, namely, peak 1 at about 620-650 nm (2.0-1.91 eV), peak 2 at 920 nm (1.35 eV), and peak 3 at 1280 nm (0.97 eV). An additional broad band (peak 4) in the infrared region with its maximum at similar to 1570 nm (0.79 eV) appears at room temperature. The origins of the emission bands are discussed.
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收藏
页码：391 / 394
页数：4
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