Vertical Confinement and Interface Effects on the Microstructure and Charge Transport of P3HT Thin Films

被引：87

作者：

Jimison, Leslie H. ^{[1
]}

Himmelberger, Scott ^{[1
]}

Duong, Duc T. ^{[1
]}

Rivnay, Jonathan ^{[1
]}

Toney, Michael F. ^{[2
]}

Salleo, Alberto ^{[1
]}

机构：

[1] Stanford Univ, Stanford, CA 94305 USA

[2] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA

来源：

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS | 2013年 / 51卷 / 07期

基金：

美国国家科学基金会;

关键词：

charge transport; crystallization; structure-property relations; thin films; X-ray; X-RAY-SCATTERING; FIELD-EFFECT MOBILITY; MOLECULAR-WEIGHT; PI-INTERACTION; HOLE MOBILITY; POLYMER; CRYSTALLIZATION; SURFACE; KINETICS; CRYSTALLINITY;

D O I：

10.1002/polb.23265

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Using X-ray diffraction-based pole figures, we present quantitative analysis of the microstructure of poly(3-hexylthiophene) thin films of varying thicknesses, which allows us to determine the crystallinity and microstructure at the semiconductor-dielectric interface. We find that the interface is approximately one fourth as crystalline as the bulk of the material. Furthermore, the use of a self-assembled monolayer (SAM) enhances the density of interface-nucleated crystallites by a factor of similar to 20. Charge transport measurements as a function of film thickness correlate with interface crystallinity. Hence, we establish the crucial role of SAMs as nucleating agents for increasing carrier mobility in field-effect devices. (C) 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2013, 51, 611-620

引用

收藏

页码：611 / 620

页数：10

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