Defect reduction and surface passivation of SiO2/Si by heat treatment with high-pressure H2O vapor

被引：14

作者：

Sameshima, T ^{[1
]}

Sakamoto, K ^{[1
]}

Asada, K ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Tokyo 1848588, Japan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 02期

关键词：

D O I：

10.1007/s003390050993

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heat treatment with high-pressure H2O vapor was applied to improve interface properties of SiO2/Si and passivate the silicon surface. Heat treatment at 180-420 degrees C with high-pressure H2O vapor changed SiO2 films, 150 nm thick formed at room temperature by thermal evaporation in vacuum, into SiO2 films with a Si-O-Si bonding network similar to that of thermally grown SiO2 films. Heat treatment at 130 degrees C with 2.8 x 10(5) Pa H2O for 3 h reduced the recombination velocity for the electron minority carriers from 405 cm/s (as-fabricated 150-nm-thick SiOx/Si) to 5 cm/s. Field-effect passivation was demonstrated by an additional deposition of defective SiOx films on the SiO2 films formed by heat treatment at 340 degrees C with high-pressure H2O vapor. The SiOx deposition reduced the recombination velocity from 100 cm/s to 48 cm/s.

引用

页码：221 / 224

页数：4

共 15 条

[1] INJECTION-LEVEL DEPENDENT SURFACE RECOMBINATION VELOCITIES AT THE SILICON-PLASMA SILICON-NITRIDE INTERFACE [J].