Study of oxygen transport in Czochralski growth of silicon

被引：29

作者：

Müller, G

Mühe, A

Backofen, R

Tomzig, E

von Ammon, W

机构：

[1] Univ Erlangen Nurnberg, Crystal Lab, Dept Mat Sci WW 6, D-91058 Erlangen, Germany

[2] Fraunhofer Inst IISB, D-91058 Erlangen, Germany

[3] Wacker Siltron AG, D-84479 Burghausen, Germany

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 45卷 / 2-3期

关键词：

silicon; Czochralski crystal growth; oxygen measurement; numerical simulation; transport modelling;

D O I：

10.1016/S0167-9317(99)00115-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present status and special features of experimental analysis and numerical modelling of oxygen transport in the Czochralski growth of silicon is treated. The solubility of oxygen in liquid Si is discussed in detail as this parameter is used as a boundary condition (oxygen source) in the numerical process models. The possibility of in situ measurement of the oxygen distribution in the melt in dependence from boundary conditions by using an electrochemical sensor is shown. Model conceptions for a numerical simulation of the oxygen transport in Czochralski melts are discussed in detail. The problem of boundary layer resolution is analysed, examples how to solve it are given. A quantitative modelling of the oxygen transport suffers at present from the fact that the existing turbulence models are not adequate to predict the velocity field precisely enough. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：135 / 147

页数：13

共 18 条

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Barin I.P.D., 1989, Thermochemical Data of Pure Substances

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