Electronic and chemical properties of tin-doped indium oxide (ITO) surfaces and ITO/ZnPc interfaces studied in-situ by photoelectron spectroscopy

被引：100

作者：

Gassenbauer, Y ^{[1
]}

Klein, A ^{[1
]}

机构：

[1] TH Darmstadt, Inst Sci Mat, Surface Sci Div, D-64287 Darmstadt, Germany

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 2006年 / 110卷 / 10期

关键词：

D O I：

10.1021/jp056640b

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The chemical and electronic properties of tin-doped indium oxide (ITO) surfaces and its interface with zinc phthalocyanine (ZnPc) were investigated Using photoelectron spectroscopy partly excited by synchrotron radiation from the BESSY II storage ring. Preparation and analysis of ITO and ITO/ZnPc layer sequences were performed in-situ without breaking vacuum. The Fermi level position at the ITO surface varies strongly with oxygen content in the sputter gas, which is attributed to an increase of surface band bending as a consequence of the passivation of the metallic surface states of ITO. The shift of the Fermi level is accompanied by a parallel increase of the work function from 4.4 to similar to 5.2 eV. No changes in the surface dipole are observed with an ionization potential of I-P = 7.65 +/- 0.1 eV. The barrier height for hole injection at the ITO/ZnPc interface does not vary with initial ITO work function, which can be related to different chemical reactivities at the interface.

引用

页码：4793 / 4801

页数：9

共 49 条

[1] Interface modification of ITO thin films: organic photovoltaic cells [J].

Armstrong, NR ;

Carter, C ;

Donley, C ;

Simmonds, A ;

Lee, P ;

Brumbach, M ;

Kippelen, B ;

Domercq, B ;

Yoo, SY .

THIN SOLID FILMS, 2003, 445 (02) :342-352

[2] Commissioning results of the BTUC-PGM beamline [J].

Batchelor, DR ;

Follath, R ;

Schmeisser, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 467 :470-473

[3] Interface electronic structure of organic semiconductors with controlled doping levels [J].

Blochwitz, J. ;

Fritz, T. ;

Pfeiffer, M. ;

Leo, K. ;

Alloway, D. M. ;

Lee, P. A. ;

Armstrong, N. R. .

ORGANIC ELECTRONICS, 2001, 2 (02) :97-104

[4]

Brabec CJ, 2001, ADV FUNCT MATER, V11, P15, DOI 10.1002/1616-3028(200102)11:1<15::AID-ADFM15>3.0.CO

[5]

2-A

[6]

Capasso F., 1987, Heterojunction Band Discontinuities: Physics and Device Applications

[7] Contact potential difference measurements of doped organic molecular thin films [J].

Chan, C ;

Gao, WY ;

Kahn, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04) :1488-1492

[8] High resolution x-ray photoemission study of plasma oxidation of indium-tin-oxide thin film surfaces [J].

Christou, V ;

Etchells, M ;

Renault, O ;

Dobson, PJ ;

Salata, OV ;

Beamson, G ;

Egdell, RG .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) :5180-5187

[9] OXYGEN VACANCIES AND DEFECT ELECTRONIC STATES ON THE SNO2(110)-1X1 SURFACE [J].

COX, DF ;

FRYBERGER, TB ;

SEMANCIK, S .

PHYSICAL REVIEW B, 1988, 38 (03) :2072-2083

[10] SOLID-STATE AND SURFACE-CHEMISTRY OF SN-DOPED IN2O3 CERAMICS [J].

COX, PA ;

FLAVELL, WR ;

EGDELL, RG .

JOURNAL OF SOLID STATE CHEMISTRY, 1987, 68 (02) :340-350

← 1 2 3 4 5 →