Contact potential difference measurements of doped organic molecular thin films

被引:8
作者
Chan, C [1 ]
Gao, WY [1 ]
Kahn, A [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2004年 / 22卷 / 04期
关键词
D O I
10.1116/1.1688363
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The possibility of nonequilibrium conditions in doped organic molecular thin films is investigated using a combination of ultraviolet photoemission spectroscopy (UPS) and contact potential difference measurements. Surface or interface photovoltage is of particular concern in materials with large band gap and appreciable band (or energy level) bending at interfaces. We investigate here zinc phthalocyanine (ZnPc) and N,N'-diphenyl-N,N-bis(1-naphthyl)-1,1'biphenyl-4,4" diamine (alpha-NPD) p-doped, with the acceptor molecule, tetrafluorotetracyanoquinodimethane (F-4-TCNQ). In both cases, we observe an upward movement of the vacuum level away from the metal interface with respect to the Fermi level, consistent with the formation of a depletion region. We show that photovoltage is not a significant factor in these doped films, under ultraviolet illumination during UPS. We suggest that the carrier recombination rate in organic films is sufficiently fast to exclude any photovoltage effects at room temperature. (C) 2004 American Vacuum Society.
引用
收藏
页码:1488 / 1492
页数:5
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