Ultrathin photoresists for EUV lithography

被引：26

作者：

Rao, V ^{[1
]}

Cobb, J ^{[1
]}

Henderson, C ^{[1
]}

Okoroanyanwu, U ^{[1
]}

Bozman, D ^{[1
]}

Mangat, P ^{[1
]}

Brainard, R ^{[1
]}

Mackevich, J ^{[1
]}

机构：

[1] Intel Corp, Santa Clara, CA 95052 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2 | 1999年 / 3676卷

关键词：

ultra-thin photoresists; EUV lithography; hardmask;

D O I：

10.1117/12.351135

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The strong attenuation of EUV radiation in organic materials has necessitated the use of a thin layer imaging (TLI) resist for lithographic patterning. We have studied several TLI processes for EUV and found the use of an ultra-thin single layer resist (UTR) over a hardmask is a plausible resist system. We have developed new EW resist systems based on DUV chemical approaches. These EW resists pattern features as small as 70 nm LIS and 70 nm isolated features. The UTR process shows high sensitivity and low line edge roughness compared to other thin layer imaging resist processes such as top-surface imaging (TSI). The advantage of these UTR resists is the current familiarity in the industry with processing and materials development. We have also been able to address one of the main concerns surrounding such: thin resists, and we have found they are sufficient to pattern the hard mask with enough resist remaining.

引用

页码：615 / 626

页数：6