Micro XY-stage using silicon on a glass substrate

被引:41
作者
Kim, CH [1 ]
Kim, YK [1 ]
机构
[1] Seoul Natl Univ 007, Sch Elect Engn & Comp Sci, Kwanak Gu, Seoul 151742, South Korea
关键词
D O I
10.1088/0960-1317/12/2/301
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we describe a single-crystal silicon (SCS) micro XY-stage with a 50 x 50 mum(2) scanning range. A simple fabrication process using a silicon-on-glass substrate is proposed for a silicon high aspect ratio structure (HARS) and easy release. The high aspect ratio SCS actuator is achieved by deep reactive ion etching and is released simply by glass etching in a hydrofluoric acid solution. The sticking problem is removed by a 100 mum deep etching of the glass substrate during the release process. The static travel range of the fabricated actuator is measured using, a built-in scale and a map of the mechanical cross talk between the X- and Y-axis driving is constructed. The resonant frequency is measured at 360 Hz in air.
引用
收藏
页码:103 / 107
页数:5
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