Self-purification in semiconductor nanocrystals

被引:572
作者
Dalpian, Gustavo M. [1 ]
Chelikowsky, James R.
机构
[1] Univ Texas, Dept Phys, Ctr Computat Mat, Inst Computat Engn & Sci, Austin, TX 78712 USA
[2] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA
关键词
D O I
10.1103/PhysRevLett.96.226802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Doping of nanocrystals is an important and very difficult task. "Self-purification" mechanisms are often claimed to make this task even more difficult, as the distance a defect or impurity must move to reach the surface of a nanocrystal is very small. We show that self-purification can be explained through energetic arguments and is an intrinsic property of defects in semiconductor nanocrystals. We find the formation energies of defects increases as the size of the nanocrystal decreases. We analyze the case of Mn-doped CdSe nanocrystals and compare our results to experimental findings.
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页数:4
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共 26 条
[21]   Stability and electronic confinement of free-standing InP nanowires:: Ab initio calculations -: art. no. 193404 [J].
Schmidt, TM ;
Miwa, RH ;
Venezuela, P ;
Fazzio, A .
PHYSICAL REVIEW B, 2005, 72 (19)
[22]   Synthesis and characterization of dilute magnetic semiconductor manganese-doped indium arsenide nanocrystals [J].
Stowell, CA ;
Wiacek, RJ ;
Saunders, AE ;
Korgel, BA .
NANO LETTERS, 2003, 3 (10) :1441-1447
[23]   FORMATION OF CRYSTAL NUCLEI IN LIQUID METALS [J].
TURNBULL, D .
JOURNAL OF APPLIED PHYSICS, 1950, 21 (10) :1022-1028
[24]   Overcoming the doping bottleneck in semiconductors [J].
Wei, SH .
COMPUTATIONAL MATERIALS SCIENCE, 2004, 30 (3-4) :337-348
[25]   CHEMICAL-POTENTIAL DEPENDENCE OF DEFECT FORMATION ENERGIES IN GAAS - APPLICATION TO GA SELF-DIFFUSION [J].
ZHANG, SB ;
NORTHRUP, JE .
PHYSICAL REVIEW LETTERS, 1991, 67 (17) :2339-2342
[26]   Nitrogen solubility and induced defect complexes in epitaxial GaAs:N [J].
Zhang, SB ;
Wei, SH .
PHYSICAL REVIEW LETTERS, 2001, 86 (09) :1789-1792