Interfacial charges and electric field distribution in organic hetero-layer light-emitting devices

被引：113

作者：

Berleb, Stefan ^{[1
]}

Bruetting, Wolfgang ^{[1
]}

Paasch, Gernot ^{[2
]}

机构：

[1] Univ Bayreuth, D-95440 Bayreuth, Germany

[2] Inst Solid State & Mat Res, D-01171 Dresden, Germany

来源：

ORGANIC ELECTRONICS | 2000年 / 1卷 / 01期

关键词：

We thank T. Schoberth and A. Mückl for experimental assistance and W. Rieß (IBM Zurich) for helpful discussions. Financial support from the Deutsche Forschungsgemeinschaft is gratefully acknowledged;

D O I：

10.1016/S1566-1199(00)00007-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electric field distribution in organic hetero-layer light-emitting devices based on N,N'-diphenyl-N,N'-bis(1-naphtyl)-1,1'-biphenyl-4,4'-diamine (NPB) and 8-tris-hydroxyquinoline aluminium (Alq(3)) has been investigated under different bias conditions using capacitance-voltage measurements. Although this method yields primarily information on the differential capacitance, the data give clear evidence for the presence of negative interfacial charges with a density of 6.8 x 10(11)e cm(-2) at the NPB/Alq(3) interface at large reverse bias. This leads to a jump of the electric field at the interface and a non-uniform field distribution in the hetero-layer device. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：41 / 47

页数：7