Observation of an inverted band structure near the surface of InN

被引：6

作者：

Colakerol, L. ^{[1
]}

Piper, L. F. J. ^{[1
]}

Fedorov, A. ^{[2
]}

Chen, T. C. ^{[3
]}

Moustakas, T. D. ^{[3
]}

Smith, K. E. ^{[1
]}

机构：

[1] Boston Univ, Dept Phys, Boston, MA 02215 USA

[2] Lawrence Berkeley Natl Lab, Berkeley, CA USA

[3] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

来源：

EPL | 2008年 / 83卷 / 04期

关键词：

D O I：

10.1209/0295-5075/83/47003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The dispersion of the valence band within the electron accumulation layer of n-type InN(000 (1) over bar) has been directly measured using angle-resolved photoemission spectroscopy. Intermixing between the heavy-hole and light-hole valence bands in the intrinsic quantum well potential associated with the near-surface electron accumulation layer results in an inverted band structure, with the valence band maximum lying away from the Brillouin zone center. Such an inverted band structure has not previously been observed in an intrinsic accumulation layer. Copyright (C) EPLA, 2008.

引用

收藏

页数：5

相关论文

共 14 条

[1] Growth of InN films by RF plasma-assisted MBE and cluster beam epitaxy [J].

Chen, TCP ;

Thomidis, C ;

Abell, J ;

Li, W ;

Moustakas, TD .

JOURNAL OF CRYSTAL GROWTH, 2006, 288 (02) :254-260

[2] Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy [J].

Colakerol, Leyla ;

Veal, T. D. ;

Jeong, Hae-Kyung ;

Plucinski, Lukasz ;

DeMasi, Alex ;

Learmonth, Timothy ;

Glans, Per-Anders ;

Wang, Shancai ;

Zhang, Yufeng ;

Piper, L. F. J. ;

Jefferson, P. H. ;

Fedorov, Alexei ;

Chen, Tai-Chou ;

Moustakas, T. D. ;

McConville, C. F. ;

Smith, Kevin E. .

PHYSICAL REVIEW LETTERS, 2006, 97 (23)

[3] Quasiparticle band structure based on a generalized Kohn-Sham scheme [J].

Fuchs, F. ;

Furthmueller, J. ;

Bechstedt, F. ;

Shishkin, M. ;

Kresse, G. .

PHYSICAL REVIEW B, 2007, 76 (11)

[4] PROBING THE HOLE DISPERSION-CURVES OF A QUANTUM-WELL USING RESONANT MAGNETOTUNNELING SPECTROSCOPY [J].

HAYDEN, RK ;

MAUDE, DK ;

EAVES, L ;

VALADARES, EC ;

HENINI, M ;

SHEARD, FW ;

HUGHES, OH ;

PORTAL, JC ;

CURY, L .

PHYSICAL REVIEW LETTERS, 1991, 66 (13) :1749-1752

[5] Anisotropy of the Γ-point effective mass and mobility in hexagonal InN [J].

Hofmann, T. ;

Chavdarov, T. ;

Darakchieva, V. ;

Lu, H. ;

Schaff, W. J. ;

Schubert, M. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :1854-1857

[6] Determination of the branch-point energy of InN:: Chemical trends in common-cation and common-anion semiconductors [J].

King, P. D. C. ;

Veal, T. D. ;

Jefferson, P. H. ;

Hatfield, S. A. ;

Piper, L. F. J. ;

McConville, C. F. ;

Fuchs, F. ;

Furthmueller, J. ;

Bechstedt, F. ;

Lu, Hai ;

Schaff, W. J. .

PHYSICAL REVIEW B, 2008, 77 (04)

[7]

LI S, 2005, J PHYS, V71, P35402

[8] Origin of electron accumulation at wurtzite InN surfaces -: art. no. 201307 [J].

Mahboob, I ;

Veal, TD ;

Piper, LFJ ;

McConville, CF ;

Lu, H ;

Schaff, WJ ;

Furthmüller, J ;

Bechstedt, F .

PHYSICAL REVIEW B, 2004, 69 (20) :201307-1

[9] Quantum well structures in thin metal films: simple model physics in reality? [J].

Milun, M ;

Pervan, P ;

Woodruff, DP .

REPORTS ON PROGRESS IN PHYSICS, 2002, 65 (02) :99-141

[10]

ORTNER K, 2002, PHYS REV B, V66, P5402