Anisotropy of the Γ-point effective mass and mobility in hexagonal InN

被引：42

作者：

Hofmann, T. ^{[1
]}

Chavdarov, T. ^{[1
]}

Darakchieva, V. ^{[2
]}

Lu, H. ^{[3
]}

Schaff, W. J. ^{[3
]}

Schubert, M. ^{[4
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

[2] Linkoping Univ, Dept Phys & Measurement Technol, SW-58183 Linkoping, Sweden

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[4] Univ Nebraska Licoln, Dept Elect Engn & Ctr Mat Res & Anal CMRA, Lincoln, NE USA

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565467

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We determine the anisotropic electron effective mass and mobility parameters in wurtzite InN thin films with free electron concentration N from 1.8 X 10(17) cm(-3) to 9.5 X 10(18) cm(-3) using Infrared Magneto-optic Generalized Ellipsometry. The room-temperature measurements were carried out with magnetic fields up to 4.5 T. For the Gamma-point we estimate m(perpendicular to)* = 0.047mo and m(parallel to)* = 0.039mo; for polarization perpendicular and parallel to the c-axis, respectively. Scattering by impurities or ionized donors may explain the decrease of mobility for polarization parallel to the c-axis from 1600 cm(2)/(VS) to 800 cm(2)/(VS) with increase in N, where the perpendicular mobility is further decreased, likely caused by additional grain boundary scattering. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1854 / 1857

页数：4

共 13 条

[1] Deformation potentials of the E1(TO) and E2 modes of InN
Darakchieva, V
Paskov, PP
Valcheva, E
Paskova, T
Monemar, B
Schubert, M
Lu, H
Schaff, WJ
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (18) : 3636 - 3638
[2] Effective mass of InN epilayers
Fu, SP
Chen, YF
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (09) : 1523 - 1525
[3] Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P
Hofmann, T
Schubert, M
Herzinger, CM
Pietzonka, I
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (20) : 3463 - 3465
[4] Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry
Kasic, A
Schubert, M
Einfeldt, S
Hommel, D
Tiwald, TE
[J]. PHYSICAL REVIEW B, 2000, 62 (11) : 7365 - 7377
[5] Kasic A, 2003, GROUP III-NITRIDES AND THEIR HETEROSTRUCTURES: GROWTH, CHARACTERIZATION AND APPLICATIONS, P1750, DOI 10.1002/pssc.200303135
[6] Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
Lu, H
Schaff, WJ
Hwang, J
Wu, H
Koley, G
Eastman, LF
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (10) : 1489 - 1491
[7] Pidgeon C., 1980, HDB SEMICONDUCTORS
[8] Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures:: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs
Schubert, M
Hofmann, T
Herzinger, CM
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 2003, 20 (02) : 347 - 356
[9] Schubert M., 2004, INFRARED ELLIPSOMETR
[10] Thompkins H., 2004, HDB ELLIPSOMETRY

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