Ferromagnet semiconductor hybrid structures grown by molecular-beam epitaxy

被引：27

作者：

Tanaka, M

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 113, Japan

[2] PRESTO, Japan Sci & Technol Corp, Kawaguchi 332, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

基金：

日本科学技术振兴机构;

关键词：

ferromagnet semiconductor hybrid structures; MnAs; GaAs; trilayer; (GaMn)As; magnetic semiconductor;

D O I：

10.1016/S0022-0248(98)01446-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Recent studies on two types of ferromagnet/semiconductor hybrid structures grown by molecular-beam epitaxy (MBE) are described: (1) ferromagnet [MnAs]/semiconductor [GaAs] layered heterostructures, and (2) III-V (GaAs)-based magnetic semiconductor alloy [(GaMn)As] thin films. Their MBE growth, structures, and magnetic properties are presented. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：660 / 669

页数：10

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