(GaMn)As: GaAs-based III-V diluted magnetic semiconductors grown by molecular beam epitaxy

被引：179

作者：

Hayashi, T

Tanaka, M

Nishinaga, T

Shimada, H

Tsuchiya, H

Otuka, Y

机构：

[1] UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN

[2] RES DEV CORP JAPAN,PRESTO,SAKIGAKE 21,JAPAN

[3] UNIV TOKYO,CRYOGEN CTR,BUNKYO KU,TOKYO 113,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

GaMnAs; diluted magnetic semiconductor; low temperature MBE; ferromagnetic order; MNAS THIN-FILMS;

D O I：

10.1016/S0022-0248(96)00937-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown novel III-V diluted magnetic semiconductors, (Ga1-xMnx)As, on GaAs substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth conditions. When the Mn concentration x is relatively low (less than or similar to 0.08), homogeneous alloy semiconductors, GaMnAs, are grown with zincblende structure and slightly larger lattice constants than that of GaAs, whereas inhomogeneous structures with zincblende GaMnAs (or GaAs) plus hexagonal MnAs are formed when x is relatively high. Magnetization measurements indicate that the homogeneous GaMnAs films have ferromagnetic ordering at low temperature.

引用

页码：1063 / 1068

页数：6

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