Controlled formation of nanoscale MnAs magnetic clusters in GaAs

被引：23

作者：

deBoeck, J ^{[1
]}

Oesterholt, R ^{[1
]}

Bender, H ^{[1
]}

vanEsch, A ^{[1
]}

Bruynseraede, C ^{[1
]}

vanHoof, C ^{[1
]}

Borghs, G ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LEUVEN,DEPT FYS,B-3001 LOUVAIN,BELGIUM

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1996年 / 156卷 / 1-3期

关键词：

D O I：

10.1016/0304-8853(95)00821-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanocrystalline MnAs magnetic clusters are formed controllably in GaAs by annealing Molecular Beam Epitaxial grown Ga1-xMnxAs (0.03 < x < 0.15). Magnetic and structural properties (cluster size, epitaxial registry) are addressed. The semiconductor matrix is defect free, and excellent control in cluster location is demonstrated. Semiconductor layers grown on top of a heterogeneous GaAs/MnAs clustered buffer show good optical properties.

引用

页码：148 / 150

页数：3

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