STABILIZATION OF FACE-CENTERED-CUBIC MN FILMS VIA EPITAXIAL-GROWTH ON GAAS(001)

被引：37

作者：

JIN, X

ZHANG, M

DONG, GS

XU, M

CHEN, Y

WANG, X

ZHU, XG

SHEN, XL

机构：

[1] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

[2] ZHEJIANG INST TECHNOL,HANGZHOU 310014,PEOPLES R CHINA

[3] FUDAN UNIV,CTR ANAL & MEASUREMENT,SHANGHAI 200433,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 24期

关键词：

D O I：

10.1063/1.112466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth of fcc Mn films on the GaAs(001) surface has been achieved. The films are studied by in situ reflection high energy electron diffraction (RHEED) and ex situ x-ray diffraction (XRD). The lattice parameters of the metastable Mn films are determined to be 0.362 nm. A transition region composed of a Mn-Ga-As alloy is formed at the Mn/GaAs interfaces and is clearly verified by XRD measurements. © 1994 American Institute of Physics.

引用

页码：3078 / 3080

页数：3

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