Carrier thermal escape and retrapping in self-assembled quantum dots

被引：323

作者：

Sanguinetti, S ^{[1
]}

Henini, M

Alessi, MG

Capizzi, M

Frigeri, P

Franchi, S

机构：

[1] Univ Milano Bicocca, Ist Nazl Fis Mat, Dipartimento Sci Mat, Via Cozzi 53, I-20125 Milan, Italy

[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[3] Univ Roma La Sapienza, Dipartimento Fis, Ist Nazl Fis Mat, I-00185 Rome, Italy

[4] CNR, Inst Maspec, I-43010 Parma, Italy

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.60.8276

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of carrier thermal escape and retrapping on the temperature dependence of the photoluminescence of InAs/GaAs self-assembled quantum dots are investigated. A systematic experimental study of the temperature evolution of the photoluminescence spectra in two different sets of samples is reported. The photoluminescence behavior is well reproduced in terms of a steady state model for the carrier dynamics which takes into account the quantum-dot size distribution, random population effects, and carrier capture, relaxation, and retrapping. The relative contributions of these processes to the photoluminescence thermal quenching is discussed.

引用

收藏

页码：8276 / 8283

页数：8

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