Theory of random population for quantum dots

被引：307

作者：

Grundmann, M

Bimberg, D

机构：

[1] Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.55.9740

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Carrier capture and recombination in quantum dots are random processes. Conventional rate equation models do not take into account this property. Based on our theory of random population we predict recombination spectra, transients, and gain of quantum-dot ensembles, Even with infinitely fast interlevel energy relaxation excited levels become considerably populated. The impact of a slowdown of energy relaxation is modeled and criteria for a conclusive experimental observation of a finite interlevel-scattering rime are given.

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页码：9740 / 9745

页数：6

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