Prevention of gain saturation by multi-layer quantum dot lasers

被引：104

作者：

Schmidt, OG ^{[1
]}

Kirstaedter, N ^{[1
]}

Ledentsov, NN ^{[1
]}

Mao, MH ^{[1
]}

Bimberg, D ^{[1
]}

Ustinov, VM ^{[1
]}

Egorov, AY ^{[1
]}

Zhukov, AE ^{[1
]}

Maximov, MV ^{[1
]}

Kopev, PS ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 14期

关键词：

semiconductor quantum dots; semiconductor junction lasers;

D O I：

10.1049/el:19960851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors compare the threshold current density j(th) against the laser length of a single layer quantum dot (SLQD) laser with a sixfold multilayer quantum dot (MLQD) laser. Gain saturation is not observed in the MLQD laser. They calculate j(th) against the number of dot layers including gain saturation. The strong impact of thermal coupling of carriers on j(th) is demonstrated.

引用

页码：1302 / 1304

页数：3

共 5 条

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Mao, MH
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KIRSTAEDTER, N
LEDENTSOV, NN
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USTINOV, VM
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KOPEV, PS
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[5] KIRSTAEDTER N, IN PRESS APPL PHYS L

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