Measuring the anisotropic thermal diffusivity of silicon nitride grains by thermoreflectance microscopy

被引:73
作者
Li, BC
Pottier, L
Roger, JP
Fournier, D
Watari, K
Hirao, K
机构
[1] Univ Paris 06, Lab Instrumentat, UPR A0005 CNRS, F-75005 Paris, France
[2] Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 462, Japan
关键词
non-destructive evaluation; thermal conductivity; Si3N4; photoreflectance microscopy;
D O I
10.1016/S0955-2219(98)00258-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High-resolution thermoreflectance microscopy measurements were performed at five frequencies on rod-shaped Si3N4 grains in a ceramic. Our heat diffusion model takes account of the coating and of a coating/substrate resistance. The parameters are adjusted to fit the measurements at the five frequencies simultaneously. The principal diffusivities obtained in individual grains are 0.32 cm(2) s(-1) along the a-axis, and 0.84 cm(2) s(-1) along the c-axis (corresponding conductivities: 69 and 180 Wm(-1) K-1). The thermal anisotropy inside individual Si3N4 grains is found to be intrinsic, without direct connection with their elongated shape. 'Macroscopic' diffusivities, obtained by mirage effect, are different from the values measured inside individual grains, as a consequence of the dispersion of the grains' orientations in the ceramic and of a second-phase effect. (C) 1999 Elsevier Science Limited. All rights reserved.
引用
收藏
页码:1631 / 1639
页数:9
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