CBE of 1.55 mu m (GaIn)(AsP) lasers for monolithic integration

被引:5
作者
Nutsch, A [1 ]
Torabi, B [1 ]
Kratzer, H [1 ]
Trankle, G [1 ]
Weimann, G [1 ]
机构
[1] WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY
关键词
D O I
10.1016/S0022-0248(96)01205-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Chemical beam epitaxy is well suited for monolithic integration due to its mask selective growth. We have grown embedded GaInAsP/GaInAsP SCH MQW laser structures in grooves in InP substrates etched by ECR-RIE using CH2/H-2 with Si3N4 masks. both, for etching and selective growth. Our laser structure consisted of six compressively strained quaternary MQWs, quaternary barriers (lambda = 1.2 mu m) and confinement layers (lambda = 1.1 mu m). Selectively grown stripe lasers in 4 mu m wide grooves showed threshold currents of 16 mA for a length of 280 mu m. No change in composition of the quaternary core appeared for lasers in 7 and 30 mu m wide grooves, when compared with lasers on planar substrates. Quantum wells grown in narrow 4 mu m wide grooves, on the other hand showed wavelength shifts depending on substrate misorientation. A 10 nm redshift is observed on (100) substrates oriented 2 degrees off towards the next [110] direction,whereas a slight blueshift on (100) exact oriented substrates occurred.
引用
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页码:1200 / 1204
页数:5
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