Electrical properties of sputtered PZT films on stabilized platinum electrode

PZT (54/46) thin films were deposited by r.f. magnetron sputtering followed by a post-annealing treatment on silicon substrates. The crucial role of a Ti adhesion layer on the Ti/Pt bottom electrode is presented. The deposition conditions and the thickness of Ti have dominant effects on the interactions between Ti and Pt during the annealing treatment. The Pt layer, whatever its thickness, did not act as a barrier against Ti-out diffusion. The stability of the bottom electrode was achieved by using a TiOx layer instead of a pure metallic Ti adhesion layer. The electrical properties of PZT films in terms of dielectric and ferroelectric performance were evaluated particularly as a function of the PZT film thickness. (C) 1999 Elsevier Science Limited. All rights reserved.