Formation of a lead zirconate titanate (PZT)/Pt interfacial layer and structural changes in the Pt/Ti/SiO2/Si substrate during the deposition of PZT thin film by electron cyclotron resonance plasma-enhanced chemical vapor deposition

被引:30
作者
Chung, SO [1 ]
Kim, JW [1 ]
Kim, GH [1 ]
Park, CO [1 ]
Lee, WJ [1 ]
机构
[1] AGCY DEF DEV,TAEJON 305600,SOUTH KOREA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 7A期
关键词
PZT; PECVD; interfacial layer; TEM; Pt;
D O I
10.1143/JJAP.36.4386
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lead zirconate titanate (PZT) thin films were fabricated on Pt(70 nm)/Ti(100 nm)/SiO2/Si substrates at 470 degrees C by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD), A Pb-deficient interfacial layer approximately 25 nm thick was found between the PZT film and the Pt substrate by high magnification transmission electron microscopy (TEM) examination. It was concluded that the interfacial laver was produced by the short residence time of Pb oxide molecules on the Pt substrate during the early stage of the PZT film growth. During the deposition of PZT film, the Pt/Ti/SiO2/Si substrate was altered into the Pt/TiO2/Pt/TiO2/TiSi2/SiO2 structure. The structural change was attributed to the Ti out-diffusion into the Pt layer, the oxidation of Ti by the in-diffused oxygen, and the formation of TiO2/Ti-silicide by the reaction between the SiO2 and Ti layers.
引用
收藏
页码:4386 / 4391
页数:6
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