Heating near implanted medical devices by the MRI RF-magnetic field

被引：42

作者：

Nyenhuis, JA ^{[1
]}

Kildishev, AV

Bourland, JD

Foster, KS

Graber, G

Athey, TW

机构：

[1] Purdue Univ, Hillenbrand Biomed Engn Ctr, W Lafayette, IN 47907 USA

[2] CL McIntosh Associates, Rockville, MD 20852 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

Magnetic Resonance Imaging; medical implant; MRI safety; RF heating; infusion pump;

D O I：

10.1109/20.800779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature rise in the vicinity of a medical implant due to the RF field in Magnetic Resonance Imaging taken to be a conducting cylinder resembling the geometry of a commercial infusion pump. Measurements of temperature rise were made with the pump in a phantom in a clinical imager, The RF protocol was 20-minutes long and produced a specific absorption rate (SAR) of 0.95 W/kg in the 34-kg phantom, In the measurements, the maximal temperature rise near the implant (0.66 degrees C) was about 3 times the control rise (0.23 degrees C) with no implant. The calculations are consistent with experiment.

引用

页码：4133 / 4135

页数：3

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