Metal gate work function adjustment for future CMOS technology

被引：44

作者：

Lu, Q ^{[1
]}

Lin, R ^{[1
]}

Ranade, P ^{[1
]}

King, TJ ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIT.2001.934939

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CMOS transistors were fabricated using a single metal, (110)-Mo, as the gate material. (110)-Mo shows high work function value that is suitable for PMOSFETs, and, with nitrogen implantation, its work function can be reduced to meet the requirements of NMOSFETs. The change in Mo work function can be controlled by the nitrogen implant parameters, which is potentially useful for multiple-V-T technology. TEM and EDS analysis show that Mo gate electrodes are stable after undergoing a conventional CMOS process.

引用

页码：45 / 46

页数：2