Diamond tips and cantilevers for the characterization of semiconductor devices

被引：24

作者：

Malavé, A

Oesterschulze, E

Kulisch, W

Trenkler, T

Hantschel, T

Vandervorst, W

机构：

[1] Univ Kassel, Phys Tech Inst, D-34109 Kassel, Germany

[2] IMEC, B-3001 Louvain, Belgium

来源：

关键词：

applications; diamond films; diamond tips; scanning probe microscopy;

D O I：

10.1016/S0925-9635(98)00388-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly boron doped diamond tips on diamond cantilevers have been prepared by means of the moulding technique and been tested for applications in scanning probe microscopy measurements for the characterization of semiconductor devices. Tips doped with ca 1% boron show a resistivity of some 10(-3) Ohm cm; their radius of curvature is ca 20 nm. With respect to wear resistance, they are superior to either nitride probes also fabricated by the moulding technique or to tapping mode silicon tips. Finally, first measurements revealed the suitability of such probes for applications in scanning spreading resistance microscopy, scanning capacitance microscopy and nanopotentiometry measurements. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：283 / 287

页数：5

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