Mn-related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy

被引：49

作者：

Korotkov, RY

Gregie, JM

Wessels, BW

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

基金：

美国国家科学基金会;

关键词：

gallium nitride; transition metals; manganese; absorption;

D O I：

10.1016/S0921-4526(01)00660-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, the optical absorption and photoluminescence spectra of semi-insulating Mn-doped GaN films were studied. Two characteristic bands were observed in the absorption spectra of Mn-doped epilayers at 300K. The integrated intensities of these bands increased with increasing Mn concentration indicating that they were Mn-related. An analysis of the temperature behavior of the absorption band with a maximum at 1.5eV indicated that it involved a free to bound transition from the valence band to the deep Mn-acceptor level. Photoluminescence measurements of Mn-doped films indicated the presence of an intra 3d-shell transition of the Mn ion. The luminescence band at 1.25+/-0.02eV is tentatively attributed to the T-4(1)(G) --> (6)A(1)(S) transition. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：30 / 33

页数：4

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