Novel class of low molecular-weight organic resists for nanometer lithography

被引：109

作者：

Yoshiwa, M

Kageyama, H

Shirota, Y

Wakaya, F

Gamo, K

Takai, M

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT APPL CHEM,SUITA,OSAKA 565,JAPAN

[2] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA 560,JAPAN

[3] OSAKA UNIV,SCI & RES CTR EXTREME MAT,TOYONAKA,OSAKA 560,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 17期

关键词：

D O I：

10.1063/1.117714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel class of low molecular-weight organic resist materials for nanometer lithography, 1,3,5-tris[4-(4-toluenesulfonyloxy)phenyl]benzene (TsOTPB) and 4,4',4 ''-tris(allylsuccinimido)triphenylamine (ASITPA), was designed and synthesized. TsOTPB with a glass-transition temperature (Tg) of 64 degrees C and ASITPA with a Tg of 80 degrees C were found to function as positive and negative resists, respectively, enabling the fabrication of 150 and 70 nm line patterns on exposure to an electron beam at 50 keV. (C) 1996 American Institute of Physics.

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页码：2605 / 2607

页数：3

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