From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices

被引：122

作者：

Mueller, Stefan ^{[1
]}

Mueller, Johannes ^{[2
]}

Hoffmann, Raik ^{[2
]}

Yurchuk, Ekaterina ^{[1
]}

Schloesser, Till ^{[3
]}

Boschke, Roman ^{[3
]}

Paul, Jan ^{[2
]}

Goldbach, Matthias ^{[3
]}

Herrmann, Tom ^{[3
]}

Zaka, Alban ^{[3
]}

Schroeder, Uwe ^{[1
]}

Mikolajick, Thomas ^{[1
,4
]}

机构：

[1] NaMLab gGmbH, D-01187 Dresden, Germany

[2] Fraunhofer CNT, D-01099 Dresden, Germany

[3] Globalfoundries Dresden Module One LLC & Co KG, D-01109 Dresden, Germany

[4] Tech Univ Dresden, Inst Semicond & Microsyst, D-01187 Dresden, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 12期

关键词：

Disturb; embedded memory; endurance; ferroelectric field-effect-transistor (FeFET); V-DD/3; scheme; LONG RETENTION; POLARIZATION; FET;

D O I：

10.1109/TED.2013.2283465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric Si: HfO2 has been investigated starting from metal-ferroelectric-metal (MFM) capacitors over metal-ferroelectric-insulator-semiconductor (MFIS) and finally ferroelectric field-effect-transistor (FeFET) devices. Endurance characteristics and field cycling effects recognized for the material itself are shown to also translate to highly scaled 30-nm FeFET devices. Positive-up negative-down as well as pulsed I-d-V-g measurements illustrate how ferroelectric material characteristics of MFM capacitors can also be identified in more complex MFIS and FeFET structures. Antiferroelectric-like characteristics observed for relatively high Si dopant concentration reveal significant trapping superimposed onto the ferroelectric memory window limiting the general program/erase endurance of the devices to 10(4) cycles. In addition, worst case disturb scenarios for a V-DD/2 and V-DD/3 scheme are evaluated to prove the viability of one-transistor memory cell concepts. The ability to tailor the ferroelectric properties by appropriate dopant concentration reveals disturb resilience up to 10(6) disturb cycles while maintaining an ION to I-OFF ratio of more than four orders of magnitude.

引用

页码：4199 / 4205

页数：7

共 19 条

[1]

[Anonymous], 2011, 2011 INT C SOL STAT

[2]

Boscke T. S., 2011, P IEEE IEDM DEC, P1

[3]

Boscke T. S., 2011, APPL PHYS LETT, V99

[4]

Boscke T. S., 2011, APPL PHYS LETT, V99