Accuracy of approximations in MOSFET charge models

被引：50

作者：

McAndrew, CC ^{[1
]}

Victory, JJ ^{[1
]}

机构：

[1] Motorola Inc, Tempe, AZ 85284 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 01期

关键词：

MOSFETs; semiconductor device modeling; SPICE;

D O I：

10.1109/16.974752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper analyzes the results of common approximations made in MOSFET charge modeling. The basis for the comparison is a charge-sheet model that is valid in all regions of operation. We show that proper modeling of surface potential as a function of position along the channel is more important for capacitance coefficient modeling accuracy than partitioning of inversion charge between source and drain. In addition, we show that there is a numerical error in previous charge-sheet formulations, and provide a solution for this problem.

引用

页码：72 / 81

页数：10

共 6 条

[1] MISNAN - A PHYSICALLY BASED CONTINUOUS MOSFET MODEL FOR CAD APPLICATIONS [J].