ON THE SMALL-SIGNAL BEHAVIOR OF THE MOS-TRANSISTOR IN QUASISTATIC OPERATION

被引：44

作者：

TURCHETTI, C ^{[1
]}

MASETTI, G ^{[1
]}

TSIVIDIS, Y ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027

来源：

关键词：

D O I：

10.1016/0038-1101(83)90070-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：941 / 949

页数：9

共 18 条

[1] ARREOLA JI, 1978, THESIS U FLORIDA
[2] COBBOLD RSC, 1970, THEORY APPLICATIONS
[3] A GENERAL FORMULATION OF THE PARAMETERS OF THE EQUIVALENT-CIRCUIT MODEL OF THE IGFET .2.
ELMANSY, YA
BOOTHROYD, AR
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (05) : 411 - 414
[4] Gray P. R., 1980, ANALOG MOS INTEGRATE
[5] MEYER JE, 1971, RCA REV, V32, P42
[6] TRANSIENT ANALYSIS OF MOS-TRANSISTORS
OH, SY
WARD, DE
DUTTON, RW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1571 - 1578
[7] PAULOS JJ, 1982, INT SOLID ST CIRCUIT
[8] A GENERAL 4-TERMINAL CHARGING-CURRENT MODEL FOR THE INSULATED-GATE FIELD-EFFECT TRANSISTOR .1.
ROBINSON, JA
ELMANSY, YA
BOOTHROYD, AR
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (05) : 405 - 410
[9] TSIVIDIS Y, 1982, SOLID STATE ELECTRON, V25, P1099, DOI 10.1016/0038-1101(82)90148-4
[10] RELATION BETWEEN INCREMENTAL INTRINSIC CAPACITANCES AND TRANSCONDUCTANCES IN MOS-TRANSISTORS
TSIVIDIS, YP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 946 - 948