Band alignment at metal/organic and metal/oxide/organic interfaces

被引：58

作者：

Helander, M. G. ^{[1
]}

Wang, Z. B. ^{[1
]}

Qiu, J. ^{[1
]}

Lu, Z. H. ^{[1
]}

机构：

[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

基金：

加拿大自然科学与工程研究理事会;

关键词：

band structure; charge injection; MIS structures; organic semiconductors; Schottky barriers; semiconductor-metal boundaries;

D O I：

10.1063/1.3030979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge injection at metal/organic interfaces dictates the performance, lifetime, and stability of organic electronic devices. We demonstrate that interface dipole theory, originally developed to describe Schottky contacts at metal/semiconductor interfaces, can also accurately describe the injection barriers in real organic electronic devices. It is found that theoretically predicted hole injection barriers for various archetype metal/organic and metal/oxide/organic structures are in excellent agreement with values extracted from experimental transport measurements. Injection barriers at metal/organic and metal/oxide/organic interfaces can therefore be accurately predicted based on the knowledge of only a few fundamental material properties of the oxide and organic layers.

引用

页数：3

共 26 条

[1] Degradation mechanism of small molecule-based organic light-emitting devices
Aziz, H
Popovic, ZD
Hu, NX
Hor, AM
Xu, G
[J]. SCIENCE, 1999, 283 (5409) : 1900 - 1902
[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[3] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS
COWLEY, AM
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3212 - &
[4] Complex band structure and the band alignment problem at the Si-high-k dielectric interface -: art. no. 195306
Demkov, AA
Fonseca, LRC
Verret, E
Tomfohr, J
Sankey, OF
[J]. PHYSICAL REVIEW B, 2005, 71 (19)
[5] ELECTRON-STATES AT SEMICONDUCTOR INTERFACES - THE INTRINSIC AND EXTRINSIC CHARGE NEUTRALITY LEVELS
FLORES, F
PEREZ, R
RINCON, R
SAIZPARDO, R
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1993, 344 (1673): : 567 - 577
[6] THEORY OF SURFACE STATES
HEINE, V
[J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &
[7] Contact formation at the C60/alkali-metal fluoride/Al interface
Helander, M. G.
Wang, Z. B.
Lu, Z. H.
[J]. APPLIED PHYSICS LETTERS, 2008, 93 (08)
[8] Helander M. G., 2008, P SPIE, V7051
[9] METAL-SEMICONDUCTOR CONTACTS - ELECTRONIC-PROPERTIES
MONCH, W
[J]. SURFACE SCIENCE, 1994, 299 (1-3) : 928 - 944
[10] Slope parameters of the barrier heights of metal-organic contacts
Mönch, W
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (11)

← 1 2 3 →