Electronic structure of semiconductor nanowires

被引:192
作者
Niquet, YM [1 ]
Lherbier, A
Quang, NH
Fernández-Serra, MV
Blase, X
Delerue, C
机构
[1] CEA, Dept Rech Fondamentale & Mat Condesee, SP2M L Sim, F-38054 Grenoble 9, France
[2] Vietnamese Acad Sci & Technol, Inst Phys & Elect, Hanoi 10000, Vietnam
[3] Univ Lyon 1, Lab Phys Mat Condensee & Nanostruct, F-69622 Villeurbanne, France
[4] CNRS, UMR 5586, F-69622 Villeurbanne, France
[5] Inst Super Elect N, CNRS, UMR 8520, Inst Elect Microelect & Nanotechnol,Dept ISEN, F-59046 Lille, France
关键词
D O I
10.1103/PhysRevB.73.165319
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We compute the subband structure of several group IV and III-V < 001 >-, < 110 >-, and < 111 >-oriented nanowires using sp(3) and sp(3)d(5)s(*) tight-binding models. In particular, we provide the band gap energy of the nanowires as a function of their radius R in the range R=1-20 nm. We then discuss the self-energy corrections to the tight-binding subband structure, that arise from the dielectric mismatch between the nanowires (with dielectric constant epsilon(in)) and their environment (with dielectric constant epsilon(out)). These self-energy corrections substantially open the band gap of the nanowires when epsilon(in)>epsilon(out), and decrease slower (proportional to 1/R) than quantum confinement with increasing R. They are thus far from negligible in most experimental setups. We introduce a semi-analytical model for practical use. This semianalytical model is found in very good agreement with tight-binding calculations when epsilon(in)>epsilon(out).
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页数:13
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