High-mobility molybdenum doped indium oxide

被引：48

作者：

van Hest, MFAM ^{[1
]}

Dabney, MS ^{[1
]}

Perkins, JD ^{[1
]}

Ginley, DS ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2006年 / 496卷 / 01期

关键词：

indium oxide (206); physical vapour deposition (370); transparent conductive oxides; combinatorial science;

D O I：

10.1016/j.tsf.2005.08.314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of molybdenum doping (0-12 at.%) oil the optical and electrical properties of In,03 were investigated using combinatorial sputter deposition in combination with combinatorial analysis techniques. The electrical properties are highly dependent on the deposition temperature and the molybdenum doping concentration. A minimum temperature between 300 degrees C and 400 degrees C is needed to activate the carriers. The maximum mobility is observed at a Mo concentration of 4.4 at.% and is 65.3 cm(2) V-1 s(-1). The maximum conductivity is observed at 5.9 at.% molybdenum doping and is equal to 5000 Omega(-1) cm(-1). The carrier concentration increases with increasing molybdenum doping to a maximum value of 6.6(.)10(20) cm(-3) at a doping concentration of 8.6 at.%. The optical transparency is high (> 80%) in a wide spectral range that is dependent on the process parameters. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：70 / 74

页数：5

共 16 条

[1] Effect of substrate temperature on electrical, structural, optical and cathodoluminescent properties of In2O3-Sn thin films prepared by spray pyrolysis [J].