Dependence of the device performance on the number of stages in quantum-cascade lasers

被引:88
作者
Gmachl, C [1 ]
Capasso, F [1 ]
Tredicucci, A [1 ]
Sivco, DL [1 ]
Köhler, R [1 ]
Hutchinson, AL [1 ]
Cho, AY [1 ]
机构
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
injection lasers; intersubband lasers; mid-infrared; unipolar lasers;
D O I
10.1109/2944.788454
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The cascading scheme is a characteristic feature of quantum cascade (QC) lasers. It implies that electrons above threshold generate one photon per active region they successively traverse, This paper presents a study of the cascading behavior as a function of the number N of stacked active regions. Experimental results are presented for devices with N = 1, 3, 6, 12, 20, 30, 45, 60, and 75 active stages. The highest optical power and lowest threshold current density are obtained for laser devices with N as high as possible. However, the lowest threshold voltage and the lowest dissipated power at laser threshold are achieved for N = 3 and N = 22, respectively. We further present the highest power QC lasers so far, which, using N = 75 stages, show in pulsed mode peak powers of 1.4, 1.1, and 0.54 W at 50 K, 200 K, and room temperature, respectively, Finally, we also demonstrate the first few-stage (N < 10) QC lasers. These QC lasers show strongly reduced operating voltages. A threshold voltage around 1.5 V is achieved for N = 3. This makes the lasers very well compliant with conventional laser diode drivers, which in turn mill simplify their immediate use in systems and applications.
引用
收藏
页码:808 / 816
页数:9
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