Experimental and theoretical approach to spin splitting in modulation-doped InxGa1-xAs/InP quantum wells for B->0

被引：542

作者：

Engels, G

Lange, J

Schäpers, T

Lüth, H

机构：

[1] Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.55.R1958

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin splitting of conduction-band energy levels in a modulation-doped InP/In0.77Ga0.23As/InP quantum well has been studied by Shubnikov-de Haas oscillations. By analyzing the characteristic beating pattern of the oscillations the coupling constant alpha for spin-orbit interaction was determined. Biasing a gate on top of a Hall bat was used to modify the strength of the spin-orbit coupling. The measured spin-orbit coupling parameter alpha is quantitatively explained by utilizing a refined envelope-function-approximation theory for heterostructures.

引用

页码：R1958 / R1961

页数：4