A study of atomically-flat SiO2/Si interface formation mechanism, based on the radical oxidation kinetics

被引：23

作者：

Itoh, H ^{[1
]}

Nagamine, M ^{[1
]}

Satake, H ^{[1
]}

Toriumi, A ^{[1
]}

机构：

[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Adv LSI Technol Lab, Isogo Ku, Yokohama, Kanagawa, Japan

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00341-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have reported both the experimental results of the flat interface formation and its mechanism based upon the theoretical analysis of the oxygen radical transport in the grown SiO2. We obtained the logarithmic dependence of the oxide film thickness on the oxidation time on the assumption that the deactivation of the oxygen radicals is proportional to the concentration. The characteristic length "a" of the oxygen radicals plays an important role in forming the flat interface.

引用

页码：71 / 74

页数：4

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